Arguments for electron conduction in silicon nitride

The carrier type conducted in the nitride under + V
G
has been interpreted as an electron by some and as a hole by others. Under - V
G
hole conduction is generally accepted. Our I-V data on the Si
3
N
4
dielectric agree with those reported in the literature but we interpret the nitride conduction as electron flow for both + V
G
and - V
G
. New arguments to support electron conduction are derived from three types of Si
3
N
4
:SiO
2
dual dielectric silicon-gate transistors.