Short-channel effects in 0.5-µm source-drain spaced vertical GaAs FET's—A first experimental investigation

The output characteristics of vertical GaAs MESFET's with a 0.5 µm source-drain spacing are discussed. It is found that the measured pinch-off voltage is substantially larger than the one expected from the geometrical Schottky diode pinch-off, and current limiting surface depletion effects are not observed.