Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate

In this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS devices. Different Ge surface cleaning methods prior to high-/spl kappa/ ALD have been evaluated together with the effects on inserting a Ge oxynitride (GeO/sub x/N/sub y/) interlayer between the high-/spl kappa/ layer and the Ge substrate. By incorporating a thin GeO/sub x/N/sub y/ interlayer, we have demonstrated excellent MOS capacitors with very small capacitance-voltage hysteresis and low gate leakage. Physical characterization has also been done to further investigate the quality of the oxynitride interlayer.