Power electronics innovation with next generation advanced power devices

Recent researches on next-generation power devices has shown remarkable progress, especially in wide band-gap power devices such as silicon carbide and gallium nitride devices, as well as novel silicon devices, like a super junction FETs. The future direction of power electronics applications is investigated in a term of output power density as an index of future power electronics roadmap, instead of power conversion efficiency; taking into account advanced devices and related technologies. A next-generation CPU power supply, a compact unit-inverter and an electric vehicle are selected as typical future applications. The possibility of power electronics innovation, with progress in the output power densities of more than 10 W/cm/sup 3/ to 30 W/cm/sup 3/ is discussed in this paper.