Development of an empirical large signal model for SiC MESFETs

We present the development of an empirical nonlinear model for silicon carbide MESFETs. The proposed channel current model is single piece, continuously differentiable and capable of accurately modeling the current-voltage characteristics of SiC MESFETs. The nonlinear model has been implemented in a commercial computer-aided-design (CAD) tool and its validity has been verified against DC I-V curves, S-parameters (up to 8 GHz) and load-pull power measurements.