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Role of i-aSi:H Layers in aSi:H/cSi Heterojunction Solar Cells

Figure 1

Figure 1
Device structure of the solar cell.

Figure 2

Figure 2
Band diagram and energy levels used in the simulation.

Figure 3

Figure 3
I–V curves of cells with different i-aSi:H layer thickness.

Figure 4

Figure 4
Dependence of (a) Formula$V_{\rm oc}$, (b) Formula$J_{\rm sc}$, (c) FF, and (d) Eff on the front i-aSi:H layer thickness with two different Dit.

Figure 5

Figure 5
(a) Carrier concentration distribution and (b) band diagram and quasi-Fermi level profile along Formula$y$-axis in the front junction region with three different front Formula$i$ layer thicknesses under the open-circuit condition. The inset of Fig. 5(b) is the zoom-in view of the electron quasi Fermi level profile in the rear cSi/i-aSi:H junction with three different front Formula$i$ layer thicknesses.

Figure 6

Figure 6
Dependence of (a) Formula$V_{\rm oc}$, (b) Formula$J_{\rm sc}$, (c) FF, and (d) Eff on the rear i-aSi:H layer thickness in cases of three different front i-aSi:H layer thicknesses.

Figure 7

Figure 7
(a) Carrier concentration distribution, (b) electron and hole electric current density distribution and (c) band diagram and quasi Fermi level profile along Formula$y$-axis in the rear junction region with three different rear i-layer thicknesses under the open-circuit condition. The inset of Fig. 7(c) is the zoom-in view of the electron quasi-Fermi level profile in the rear cSi/i-aSi:H junction with three different rear Formula$i$-layer thicknesses.

Figure 8

Figure 8
Dependence of (a) Formula$V_{\rm oc}$, (b) Formula$J_{\rm sc}$, (c) FF, and (d) Eff on the front i-aSi:H layer thickness with two different Formula$D_{\rm it}$. The quantum model is excluded.

Figure 9

Figure 9
Band diagram and quasi Fermi level profile along y-axis in the front junction region with three different front i layer thicknesses under the open-circuit condition. The quantum model is excluded.

Figure 10

Figure 10
Lowest ten subband energy levels in the hole well of the front cSi surface. Subband energy levels were obtained by solving self-consistently the Poisson–Schrödinger equations.

Figure 11

Figure 11
Dependence of (a) Voc, (b) Jsc, (c) FF, and (d) Eff on the Dit at front junction in cases of three different front i-aSi:H layer thicknesses. The rear i-aSi:H layer is fixed at 7 nm.