An RF CMOS cascode LNA with current reuse and inductive source degeneration

An RF CMOS Low-Noise Amplifier (LNA) is proposed using a current reuse technique (CRT) to increase the amplifier transconductance without increasing power dissipation. The circuit was simulated and designed with 0.5 /spl mu/m CMOS MOSIS process. At 1 GHz, the LNA noise figure (NF) is 2.7 dB, forward gain is 21.6 dB and reverse isolation is -42.5 dB. The LNA consumes 20.3 mW from a 2.2 V power supply.