Preparation of high quality amorphous Al/sub 2/O/sub 3/ thin film on silicon and its applications

Al/sub 2/O/sub 3/ thin films were deposited on silicon substrates by high-vacuum electron-beam evaporation method at 650/spl deg/C. Ferroelectric oxide (Pb(Zr/sub 0.52/Ti/sub 0.48/)O/sub 3/) (PZT) films were prepared on the Al/sub 2/O/sub 3/ buffer layer by pulsed laser deposition (PLD) method at 350/spl deg/C and rapid thermal annealing (RTA) at 650/spl deg/C. X-ray diffraction (XRD), X-ray photoelectron spectroscopes (XPS) and atomic force microscopy (AFM) results show that high quality amorphous Al/sub 2/O/sub 3/ could be obtained even at temperature as high as 650/spl deg/C. XRD result also indicates that highly [101]-oriented perovskite PZT can be obtained on the above mentioned Al/sub 2/O/sub 3/ buffer layer.