Hybrid inverter circuits of nano-MOSFET and metallic-based SET

In this paper, we give a novel choice of nanometer scale inverter. It is based on a nano-MOSFET as a drive transistor and a metallic-based SET (single electron transistor) as a load. The nano-MOSFET is assumed to have intrinsic silicon channel and metal source/drain. Applying a simple method based on ballistic transportation, the device characteristics can be determined. On the other hand, SET, the device operating on the principle of Coulomb blockade effects, can be realized on a metallic base. By connecting the SET gate to its source, we can treat it as a normal resistance. Our simulation proved the two devices cooperated very well and we got the ideal characteristics of this inverter. These results are then compared with another form of inverter that we presented previously, and we conclude the advantages of both circuits at the end of the paper.