0.25-/spl mu/m BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-/spl mu/m BiCMOS process. This is the first silicon-integrated radio front-end that can be used to meet GSM normal and micro base-station specifications reported to date. Noise figure, gain, and output third-order intercept point are 2.1 dB, 25.8 dB, and 25.7 dBm for GSM900 and 3.3 dB, 21.3 dB, and 22.5 dBm for DCS1800, respectively.