Trap energetic and spatial localization in buried-gate 6H-SiC JFETs by means of numerical device simulation

Deep levels with activation energies up to 0.59 eV have been revealed in buried gate, n-channel 6H-silicon carbide JFETs, by means of capacitance- and current-mode deep level transient spectroscopy. Numerical device simulations of the drain-current transients following a gate-to-source voltage step have enabled us to localize the different deep levels both energetically and spatially.