Characterization of systematic MOSFET current factor mismatch caused by metal CMP dummy structures

This paper presents a study on techniques for characterization of metal-oxide-semiconductor field-effect transistor (MOSFET) transconductance mismatch, using matched pairs with intentional 1% dimensional offsets. The relevance of this kind of work is demonstrated by the introduction of a new mismatch phenomenon that can be attributed to mechanical strain, associated with metal dummy structures that are required for backend chemical mechanical polishing (CMP) processing steps.