Comparison of boron diffusion profiles in ultra thin SOI structures

We have shown that B diffusion at 860/spl deg/C in the SOI structures is retarded as compared with that in bulk Si. The B diffusion retardation appears more clearly in the SIMOX structures than in the ELTRAN or UNIBOND structures. This indicates that the retardation depends on qualities of the active layer, e.g. density of extended defects and roughness of the BOX interface.