Strained-Si on Si/sub 1-x/Ge/sub x/ MOSFET inversion layer centroid modeling

An accurate model for the inversion charge centroid of strained-Si on Si/sub 1-x/Ge/sub x/ metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model.