Field emitter using multi-walled carbon nanotubes grown on silicon tips by microwave plasma-enhanced CVD

Carbon nanotubes (CNTs) were selectively grown on the silicon tips and the surrounding region by microwave plasma-enhanced chemical vapor deposition. The silicon substrate containing silicon conical tips was sputtered with the Palladium transition metal, acting as a catalytic center for nanocluster nucleation during CVD deposition. Curly and randomly oriented CNTs were found to grow selectively only on the surrounding areas of the silicon tips. Electron field emission tests carried out show a low turn-on field of approximately 3.2 V//spl mu/m. Our results show the ability to selectively grow CNTs on the silicon tip region and may have practical applications for microelectronics.