Unified MOSFET compact I-V model formulation through physics-based effective transformation

A one-region compact I/sub ds/ model from subthreshold to saturation, which resembles the same form as the well-known long-channel model but includes all major short-channel effects (SCEs) in deep-submicron (DSM) MOSFETs, has been formulated through physics-based effective transformation. The model has 23 process-dependent fitting parameters, which requires an 11-step, one-iteration extraction procedure. The new approach to modeling channel-length modulation (CLM), subthreshold diffusion current, and edge-leakage current, all in a compact form, has been verified with the 0.25-/spl mu/m experimental data. The model covers the full range of gate length (without "binning") and bias conditions, and can be correlated to true process variables for aiding technology development.