Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes

Nanometer scale planar Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The topology of the devices studied in this paper is based in real planar GaAs SBDs used in terahertz applications, such as passive frequency mixing and multiplication, in which accurate models for the diode capacitance are required. The intrinsic capacitance of such small devices, which due to edge effects strongly deviates from the ideal value, has been calculated. In good agreement with the classical models, we have found that the edge capacitance is independent of the properties of the semiconductor beneath the contact and, as novel result, that the presence of surface charges at the semiconductor dielectric interface can reduce it almost 15%. We have finally provided a compact model for the total capacitance of diodes with arbitrary shape that could be easily implemented in design automation software such as Advance Design System (ADS).