Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment

We report a notable improvement in performance, electron transport, and reliability of HfO
₂
/In
_0.53
Ga
_0.47
As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH
₃
postremote plasma treatment (PRPT). The interface state density D
_it
decreased by approximately one order of magnitude from 6.1×10
¹²
to 4×10
¹¹
cm
^-2
eV
^-1
, and the border trap density Nbt also declined ten times from 2.8×10
¹⁹
to 2.7×10
¹⁸
cm
^-3
, resulting in the reduction of the accumulation frequency dispersion and eliminate the inversion hump in C-V characteristics, and thus improves the device performances. Furthermore, positive bias temperature instability stress indicates that the sample with the AlN IPL and NH
₃
PRPT is more reliable than the sample without any IPL and plasma treatment. During PBT stress, a smaller threshold voltage shift and less transconductance degradation were observed for the sample with the AlN IPL and NH
₃
PRPT. In addition, the maximum overdrive voltage for a ten-year operating lifetime increased from 0.19 to 0.41 V.