Parameter Extraction Method for the Electrical Model of a Silicon Photomultiplier

The availability of an effective electrical model, able to accurately reproduce the signals generated by a Silicon Photo-Multiplier coupled to the front-end electronics, is mandatory when the performance of a detection system based on this kind of detector has to be evaluated by means of reliable simulations. We propose a complete extraction procedure able to provide the whole set of the parameters involved in a well-known model of the detector, which includes the substrate ohmic resistance. The technique allows achieving very good quality of the fit between simulation results provided by the model and experimental data, thanks to accurate discrimination between the quenching and substrate resistances, which results in a realistic set of extracted parameters. The extraction procedure has been applied to a commercial device considering a wide range of different conditions in terms of input resistance of the front-end electronics and interconnection parasitics. In all the considered situations, very good correspondence has been found between simulations and measurements, especially for what concerns the leading edge of the current pulses generated by the detector, which strongly affects the timing performance of the detection system, thus confirming the effectiveness of the model and the associated parameter extraction technique.