Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology

In this paper, a radiation-tolerant phase-locked loop (PLL) is designed and fabricated with 130 nm PD-SOI technology. A current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (DCC) layout of the complementary switches. Besides, the stacked SOI transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. The experimental results show that the proposed PLL has no significant jitter variations under heavy-ion experiments, compared with TMR-hardened PLL. Besides, pulsed-laser testing comprehensively characterizes the single-event transients of the PLL and demonstrates its radiation tolerant performance.