Ultra Large-Grain Poly-Si Thin-Film Transistor Using NiSi2 Seeding Si-Amplified Layer

A novel technique for enlarging grains of poly-Si thin-film has been successfully demonstrated, using a 1-μm thick Si-amplified layer (SAL) and NiSi
₂
seeds on the top. It was applied to top-gated thin-film transistors (TFTs) and showed high electrical performance. The NiSi
₂
seeds induce vertical crystallization in the SAL and migrate toward the bottom, forming columnar grains. The grain size of the poly-Si thin-film increases when the NiSi
₂
seeds diffuse deeply into the SAL and eventually an ultralarge-grain (ULG) poly-Si thin film is formed. The SAL was removed for use in the fabrication of a top-gated TFT. The performance of the ULG poly-Si TFT was compared with that of a NiSi
₂
seed-induced crystallized poly-Si TFT which was fabricated without an SAL.