A wideband resistive feedback balun LNA in 65 nm CMOS technology

A wideband resistive feedback balun low noise amplifier (LNA) is presented in this paper. The proposed LNA has a wide band gain of 22 dB in a band of 0.2-5 GHz. An improved input balun stage is used to realize a single-ended to differential conversion with optimized transconductance and amplifier open-loop gain. The wide band LNA is implemented in 65nm CMOS technology and has an area of about 0.009 mm
²
. The power consumption is below 16 mW at 1.2 V single supply. Due to different noise cancellation techniques employed, the proposed LNA achieves a superior low noise figure (NF) of 1.7 dB at 2.5 GHZ. The IIP3 linearity and 1 dB compression point of the LNA are about -4dBm and -161 dBm at 2 GHz respectively. The achieved performance results make the proposed LNA a competitive solution for RF applications up to 5 GHz.