High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-$\kappa$ Gate Dielectrics

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of
${\hbox{HfO}}_{2}$
and
${\hbox{Y}}_{2}{\hbox{O}}_{3}$
exhibited favorable adhesion properties on a flexible substrate compared with conventional low-
$\kappa$

${\hbox{SiO}}_{2}$
film. Based on the experimental results, the room-temperature
${\hbox{ IGZO/HfO}}_{2}$
TFTs demonstrated effective device integrity, and achieve a low drive voltage of
$< {\hbox{2}}$
V, a low threshold voltage of
${\hbox{0.46}} \pm {\hbox{006}}$
V, a low sub-threshold swing of
${\hbox{110}} \pm {\hbox{6}}$
mV/decade and an extremely high mobility of
${\hbox{60.2}} \pm {\hbox{32}}$
cm
$^{2}/{\hbox{V}}\cdot{\hbox{s}}$
. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.