Growth models of copper filling in through silicon via at different current density

This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm
²
and 3 mA/cm
²
. When the current density was 6 mA/cm
²
, the conformal growth of Cu was dominant. When the current density was 12 mA/cm
²
, the sub-conformal growth of Cu appeared combined with conformal growth.