Impact of channel length & oxide thickness variation in an asymmetric SGOI-TFET

In this paper we have optimized a asymmetric SGOI based TFET for low power applications with V
_DD
= 0.5 V. Here, we have observed the variation of channel length and oxide thickness on the device which affects switching figure of merit such as subthreshold swing, I
_on
and I
_off
. Effect of gate dielectric on the subthreshold performance of the SGOI-TFET is also observed using the Non-Local BTBT model and it is found that the ON current is enhanced with increase in relative permittivity of the gate dielectrics. Synopsys TCAD is used for various optimization of the device which shows the result with the record high I
_on
/I
_off
ratio of 3.4×10
⁹
and the steepest average subthreshold swing of 36 mV/ decade.