GaN-Based Light-Emitting-Diode With a p-InGaN Layer

GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick
$\hbox{p-In}_{0.01}\hbox{Ga}_{0.99}\hbox{N}$
layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.