Thermal analysis of III–V HBV diode structures on InP, GaAs, silicon and diamond substrates

Thermal analysis of In
_0.53
Ga
_0.47
As and GaAs Heterostructure Barrier Varactors diodes on InP, GaAs, silicon and diamond substrates are presented. The physical dimensions of the analysed structures correspond to the dimensions of a high power integrated HBV frequency multipliers for W-band (70-110 GHz). It is shown that material transfer to substrates with higher thermal conductivities will reduce thermal resistance by 21% and approximately 50% for In
_0.53
Ga
_0.47
As and GaAs HBVs, respectively. Thus, an enhanced thermal handling capability of the HBV multiplier sources can be obtained.