The influence of fluorinated SiNx gate insulator in a-InGaZnO thin film transistors

We fabricated highly reliable amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) with fluorinated silicon nitride (SiN
_x
) as a gate insulator. The SiN
_x
layer was formed with utilizing SiF
₄
/N
₂
as source gases at a temperature as low as 150°C. We studied the influence of hydrogen and fluorine on the electrical characteristics.