Unique property of a-InGaZnO/Ag interface on thin-film transistor

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) having Ag, Ti, and Mo as source and drain electrodes were characterized. TFTs with Ag electrodes indicated a low and noisy on-state current at a large channel length in a low drain-source voltage. This indicates that the spatial potential barrier exists at the a-IGZO/Ag interface and the resistance of the potential barrier changes like a resistance random access memory. We investigated the unique poverties of a-IGZO/Ag interface systematically.