Power-Efficient Fast Write and Hidden Refresh of ReRAM Using an ADC-Based Sense Amplifier

An ADC-based current-mode sense amplifier and its usage to improve speed, power efficiency, and reliability of ReRAM are proposed. The adaptive step-size control of incremental step pulse programming enables 2.25 times faster write with 50% power. The degradation of ReRAM cells due to aging can be recovered by hidden refresh without sacrificing system performance. The test circuits are fabricated using a 350-nm technology and integrated with a 1-Kb HfOx array chip.