Rolled-up 1.5 µm InAs quantum dot tube lasers and integrated nanophotonic circuits on Si

Low threshold, ultrahigh speed micro- and nanoscale lasers that can be directly integrated with optoelectronic and electronic components on a CMOS chip are in demand for future chip-level optical communications. In this regard, rolled-up semiconductor tube optical cavities, formed when coherently strained nanomembranes are selectively released from the host substrate, have emerged as a promising approach to realize high performance lasers on Si.
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We have investigated the design, fabrication, and characterization of InAs/InGaAsP quantum dot tube lasers. We report the first demonstration of semiconductor tube lasers that can operate at the telecom wavelength (∼ 1.5 µm). Such devices can exhibit an extremely low threshold (∼ 1.26 µW) and multiple emission wavelengths. The direct integration of quantum dot tube devices with Si waveguides has also been demonstrated.