On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory

An All-LPU scheme with improved read margin is the most favorable for parallel read. RL is the predominant factor of read margin for array size beyond Mb regardless of CRS, 1D1R, or 1S1R, but sufficient read margin is expected for a 16-Mb array. However, unreliable write is the major obstacle in CRS and 1D1R. The 1S1R crossbar RRAM with excellent read and write margins using high-bandwidth parallel schemes has the most potential as a new-generation SCM.