Thin dielectric films grown by atomic layer deposition: Properties and applications

Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al
₂
O
₃
and HfO
₂
films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.