Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-$\mu{\rm m}$ Wavelength

Room-temperature continuous-wave operation of a 1.3-μm npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain β of 0.02.