Noise coupling analysis between TSV and active circuit

This paper investigates about the noise coupling between signal TSV and active circuit in frequency domain using 3D EM solver. Because the active circuits and TSV are generally surrounded by deep N-well and substrate ties, some parameters related to dimension parameters of those are varied to clarify the tendency, and the results are explained qualitatively. After that, using S-parameter, simple MOS application is simulated in time domain simulation.