Large signal characterization of GaN HEMT transistor by multi-harmonic source & load pull tuner system

In this paper, a GaN HEMT transistor is characterized at 3.5 GHz by passive multi-harmonic source & load pull tuner system in large signal. In order to analyze the effect on PAE and output power from the source and load impedance at fundamental, 2
^nd
and 3
^rd
harmonic frequencies, multi-harmonic source and load pull tuner are used. By using this source & load pull tuner system, Cree's GaN HEMT CGH40010 transistor is characterized at 3.5 GHz with considering the source and load impedances at 2
^nd
and 3
^rd
harmonic frequencies. The characterization result shows that maximum PAE could reach 74.21% with 39.92 dBm output power.