A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals

A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals have been successfully demonstrated. The process is simple and mask free. For the 3-nm-thick channel devices, the S.S. of 88 mV/dec and I
_on
/I
_off
ratio of more than 10
⁸
can be achieved. Extreme low applied voltage for band-to-band-tunneling-induced hot electron injection tunneling (BBHE) operation and excellent retention are proposed.