Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts

In this letter, we report the demonstration of an effective electron Schottky barrier height (Φ
_B
ⁿ
) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350°C 30-s anneal. Se segregation gives Φ
_B
ⁿ
as low as ~0.13 eV.