Novel 3D electro-thermal robustness optimization approach of super junction power MOSFETs under unclamped inductive switching

This paper presents a novel approach to optimize the electro-thermal robustness of a super-junction power MOSFET under unclamped inductive switching (UIS) conditions. The loosely coupled electro-thermal simulation has been used to predict accurately the interaction between the core active device and the termination rings. The simulation results have been validated by the emission microscopy (EMMI) measurements and the transient IR thermography photos.