Gate-Geometric Recessed Nanoscale $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$–$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Double-Gate HEMT for High Breakdown

In this paper, a generalized analysis of recessed double-gate high-electron-mobility transistor for different gate geometries (T-gate, IL-gate, Γ-gate, etc.) to realize higher breakdown is carried out. The effect of gate geometries on breakdown voltage is studied through potential and electric field profile. The drain current, transconductance, intrinsic gain, capacitances, and RF performances are also studied. The analysis shows that the incorporation of these geometries not only leads to higher breakdown but also enhances the transcapacitance of the devices, which affect the device RF performance.