Study of InGaN/GaN/InGaN multi-layer barrier in GaN-based light emitting diode

A GaN-based light emitting diode (LED) with InGaN/GaN/InGaN multi-layer barrier (MLB) is studied. Simulation results show that GaN-based LED with MLB has better performance than conventional GaN-based LED with only one GaN barrier, which we found is due to enhancement of hole injection into quantum well and decrease of electron current leakage.