Total dose effect on the propagation of single event transients in a CMOS inverter string

In this work we focus on the effects of TID on the propagation of SETs in a string of inverters manufactured using bulk CMOS (180 nm) technology. Specifically, we have used a pulsed laser to measure the widths of the transients prior to and following exposure to ionizing radiation. This approach is similar to that previously used to investigate SETs in combinational and sequential logic. Depending on the conditions under which the radiation exposures occurred, some of the SETs exhibited enhanced broadening while others contracted.