Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

The performance limits of monolayer transition metal dichalcogenide
$( \hbox{MX}_{2})$
transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition
$\hbox{MX}_{2}$
. We find the lattice structures of monolayer
$\hbox{MX}_{2}$
remain the same as the bulk
$\hbox{MX}_{2}$
. Within the ballistic regime, the performances of monolayer
$\hbox{MX}_{2}$
transistors are better compared with those of the silicon transistors if a thin high-
$\kappa$
gate insulator is used. This makes monolayer
$\hbox{MX}_{2}$
promising 2-D materials for future nanoelectronic device applications.