ZrBO dielectrics for TSV production process

Dielectric films of ZrBO were grown using thermal-CVD Zr(BH
₄
)
₄
-O
₂
gas system. Oxygen gas was activated by microwave to produce its radical. The grown film showed high barrier properties for Cu diffusion with a thickness of 50 nm. Typical side step coverage was over 60% for a 45-μm-deep and 7.5-aspect-ratio TSV with a high coverage of 67% at the bottom. We report ZrBO-CVD mechanism related to the coverage.