Poly-Si TFTs With Three-Dimensional Finlike Channels Fabricated Using Nanoimprint Technology

This letter addresses the characteristics of polycrystalline-silicon (poly-Si) thin-film transistor (TFTs) with 3-D finlike channels fabricated using UV nanoimprint lithography. A transparent mold and poly-Si 3-D finlike channels with a line/space ratio of about 1:1 were fabricated and studied by SEM. The poly-Si TFTs with 3-D finlike channels, fabricated using a nanoimprint technique, have lower threshold voltage, higher ON/OFF current ratio, better subthreshold swing, higher field-effective mobility, and higher drain current than that with a single channel. The proposed approach can be utilized to fabricate high-performance poly-Si TFTs at low cost.