Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric

In this paper, we characterize the interface properties of In-rich In
0.65
Ga
0.35
As and In
0.75
Ga
0.25
As MOSFETs with ALD Al
2
O
3
gate dielectric. Interface trap density is extracted from physically based quantum mechanical low frequency CV model. We show that donor-like traps dominate the D
it
profile for In
0.75
Ga
0.25
As-channel compared to In
0.65
Ga
0.35
As-channel MOSFETs. This result explains the reason of stronger inversion of In-rich surface channel MOSFETs and hence, better transport characteristics in spite of high interface trap density.