GaN power MMICs for X-Band T/R modules

This paper presents the development of power MMICs in GaN HEMT technology for X-Band T/R modules. We will focus here specifically on the transmit path, which contains the high power amplifier and its power driver. A step by step description of the tasks in order to design this channel will be done, beginning from a short overview of the epitaxial process to the presentation of its measured and simulated power performances.