Process control monitor based extraction procedure for statistical compact MOSFET modeling

The paper reviews different approaches of the semiconductor device and integrated circuit statistical modeling. A backward propagation of variance method has been used to estimate the EKV compact model parameter distributions. A detailed analysis of this approach has been done in terms of efficiency, and accuracy aspects. The determined distributions of the EKV model process parameters responsible for an analog IC variability have been used for evaluation of statistical distributions of simple operational amplifier performances.