Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-$k$ nFETs

The random telegraph noise in the gate-induced drain leakage (GIDL) and channel currents of nanoscale high-k nMOSFETs was analyzed and compared systematically. The capture and emission probabilities of the carriers were analyzed in terms of the gate voltage and the temperature. Both emission time (τ
_e
) and capture time (τ
_c
) in the channel current have a dependence on V
_GS
. However, τ
_e
in the GIDL current is independent of V
_GS
but strongly dependent on the temperature since τ
_e
is decreased more significantly with increasing temperature than τ
_c
. As V
_GS
increases, τ
_c
in the GIDL current increases.