Ultralow-Power TFT With Gate Oxide Fabricated by Nitric Acid Oxidation Method

We have fabricated a thin-film transistor (TFT) in which a gate oxide layer possesses a stack structure with an ultrathin interfacial SiO
₂
layer formed by the nitric acid oxidation of silicon (NAOS) method at room temperature and a 40 nm CVD SiO
₂
layer. The drain current-voltage characteristics show that TFT with NAOS interfacial layer can be operated at 3 V (the conventional operation voltage is 12-15 V), indicating that a vast decrease in TFT power consumption is possible. The threshold voltage becomes less than 1 V, and the short-channel effect can be avoided.